ipb110n06l g ipp110n06l g opti mos ? power-transistor features ? for fast switching converters and sync. rectification ? n-channel enhancement - logic level ? 175 c operating temperature ? avalanche rated ? pb-free lead plating, rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 78 a t c =100 c 55 pulsed drain current i d,pulse t c =25 c 1) 312 avalanche energy, single pulse e as i d =78 a, r gs =25 ? 280 mj reverse diode d v /d t d v /d t i d =78 a, v ds =48 v, d i /d t =200 a/s, t j,max =175 c 6 kv/s gate source voltage v gs 20 v power dissipation p tot t c =25 c 158 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 value 1) see figure 3 v ds 60 v r ds(on),max smd version 11 m ? i d 78 a product summary type package marking ipb110n06l g p-to263-3-2 110n06l ipp110n06l g p-to220-3-1 110n06l type ipb110n06l g ipp110n06l g package pg-to263-3-2 pg-to220-3-1 marking 110n06l 110n06l rev. 1.0 page 1 2006-05-04
ipb110n06l g ipp110n06l g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.95 k/w smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 2) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 60 - - v gate threshold voltage v gs(th) v ds = v gs , i d =94 a 1.2 1.6 2 zero gate voltage drain current i dss v ds =60 v, v gs =0 v, t j =25 c - 0.01 1 a v ds =60 v, v gs =0 v, t j =125 c - 1 100 gate-source leakage current i gss v gs =20 v, v ds =60 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =78 a - 8.5 11 m v gs =4.5 v, i d =52 a - 10.9 15 v gs =10 v, i d =78 a, smd version 8.2 11.0 v gs =4.5 v, i d =52 a, smd version 10.6 14.7 gate resistance r g - 1.9 - transconductance g fs | v ds |>2| i d | r ds(on)max , i d =78 a 47 93 - s 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. values rev. 1.0 page 2 2006-05-04
ipb110n06l g ipp110n06l g parameter symbol conditions unit min. typ. max. d y namic characteristics input capacitance c iss - 2000 2700 pf output capacitance c oss - 470 630 reverse transfer capacitance c rss - 120 180 turn-on delay time t d(on) - 8 13 ns rise time t r -1929 turn-off delay time t d(off) -4568 fall time t f -1827 gate char g e characteristics 3) gate to source charge q gs - 8 11 nc gate charge at threshold q g(th) -34 gate to drain charge q gd -2030 switching charge q sw -2536 gate charge total q g -5979 gate plateau voltage v plateau - 4.0 - v output charge q oss v dd =30 v, v gs =0 v -1925 reverse diode diode continous forward current i s - - 78 a diode pulse current i s,pulse - - 312 diode forward voltage v sd v gs =0 v, i f =78 a, t j =25 c - 0.98 1.3 v reverse recovery time t rr -5467ns reverse recovery charge q rr -6176nc 3) see figure 16 for gate charge parameter definition v r =30 v, i f = i s , d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =30 v, f =1 mhz v dd =30 v, v gs =10 v, i d =78 a, r g =3 ? v dd =30 v, i d =78 a, v gs =0 to 10 v rev. 1.0 page 3 2006-05-04
ipb110n06l g ipp110n06l g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 0 20 40 60 80 100 120 140 160 180 0 50 100 150 200 t c [c] p tot [w] 0 10 20 30 40 50 60 70 80 90 0 50 100 150 200 t c [c] i d [a] rev. 1.0 page 4 2006-05-04
ipb110n06l g ipp110n06l g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 3.5 v 4 v 4.5 v 5 v 5.5 v 10 v 0 5 10 15 20 0 40 80 120 160 200 i d [a] r ds(on) [m ? ] 25 c 175 c 0 20 40 60 80 100 012345 v gs [v] i d [a] 0 20 40 60 80 100 120 0 40 80 120 160 i d [a] g fs [s] 3 v 3.5 v 4 v 4.5 v 5 v 5.5 v 10 v 0 50 100 150 200 012345 v ds [v] i d [a] rev. 1.0 page 5 2006-05-04
ipb110n06l g ipp110n06l g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =78 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 5 10 15 20 25 30 35 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 94 a 940 a 0 0.5 1 1.5 2 2.5 3 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 3 10 2 10 1 0 1020304050 v ds [v] c [pf] 25 c 175 c 25c 98% 175c 98% 10 3 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] rev. 1.0 page 6 2006-05-04
ipb110n06l g ipp110n06l g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =78 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 12v 30 v 48 v 0 2 4 6 8 10 12 0 20406080 q gate [nc] v gs [v] 50 55 60 65 70 75 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 10 3 10 2 10 1 10 0 10 2 10 1 10 0 t av [s] i av [a] rev. 1.0 page 7 2006-05-04
ipb110n06l g ipp110n06l g pg-to-263 (d2-pak) rev. 1.0 page 8 2006-05-04
ipb110n06l g ipp110n06l g pg-to220-3: outline rev. 1.0 page 9 2006-05-04
ipb110n06l g ipp110n06l g published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. a ll rights reserved. a ttention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, i ncluding without limitation warranties of information for further information on technology, delivery terms and condi tions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies offi ce. infineon technologies components may only be used in life-suppo rt devices or systems with the express written approval of infineon technologies, if a failure of such compone nts can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human bo dy, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to as sume that the health of the user or other persons may be endangered. rev. 1.0 page 10 2006-05-04
|
